Electron beam-induced current, cathodoluminescence and cross-sectional transmission electron microscopy characterization of degraded AlGaAs/GaAs lasers

Electron microscopic techniques have been applied to the characterization of degraded single quantum well separate-confinement heterostructure (SQW SCH) stripe geometry lasers. Scanning electron microscopy (SEM) investigations have revealed changes at the lasers mirrors, an anomalous behavior of their junctions and a partial lack of the electron beam-induced luminescence in the active stripe areas of the devices. Cross-sectional transmission electron microscopy (XTEM) has revealed the presence of many crystallographic defects located in the active and cladding layers in the stripe area.