Title of article :
Epitaxial growth of faceted SiC single-crystal nanoparticles using a carbon nanocapsule as a reacting template
Author/Authors :
Chien-Chong Chen، نويسنده , , Huei-Ping Tseng، نويسنده , , Tsung-Yen Huang، نويسنده , , Jung-Chang Kuo، نويسنده , , Gan-Lin Huang، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2009
Abstract :
In this study, the faceted SiC nanoparticles displaying a unified faceted angle have been synthesized using a CNC (carbon nanocapsule) as a reacting template. A possible new reaction between SiO(g) and graphene, 2SiO(g) + C(s) → SiC(s) + SiO2(g), was found. A growth model was proposed to elucidate the growth of the faceted SiC nanoparticles. It was found that the match of the graphene (0 0 2) plane of the CNC caused the growth of SiC nanoparticles to be initiated by the SiC {2 20 } planes. The faceted angle of SiC nanoparticles was a result of the intersection angle of the {1 1 1} planes.
Keywords :
Ceramics , Carbides , Epitaxial growth , Crystal growth
Journal title :
Materials Chemistry and Physics
Journal title :
Materials Chemistry and Physics