Title of article
Yttrium doping behavior in BaTiO3 ceramics at different sintered temperature
Author/Authors
Jianquan Qi، نويسنده , , LONGTU LI، نويسنده , , YONGLI WANG، نويسنده , , Yuwei Fan، نويسنده , , ZHILUN GUI، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
5
From page
423
To page
427
Abstract
The doping behaviors of Y-doped BaTiO3 ceramics comparing with that of undoped one at different sintering temperature were studied. Sintering at low temperature, yttrium preferably occupies Ti-site; with the sintering temperature rise, it tends to occupy Ba-site and act as donor. The dense and semiconducting ceramics of Y-doped BaTiO3 can be obtained when the sintering temperature above 1250 °C. Sintered at 1250 °C results in the sample with the maximum of lattice parameters for the minimum vacancy concentration.
Keywords
Yttrium , BaTiO3 , Sintering , Defect , PTCR
Journal title
Materials Chemistry and Physics
Serial Year
2003
Journal title
Materials Chemistry and Physics
Record number
1061915
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