Epitaxial growth of ZnO films at extremely low temperature by atomic layer deposition with interrupted flow

Thin crystalline films of zinc oxide (ZnO) of high quality have been grown epitaxially on a (0 0 0 1) c-plane of a sapphire substrate with atomic layer deposition (ALD) at extra-low temperature. With diethylzinc (DEZn) and deionized water as precursors in combination with interrupted flow, we obtained ZnO thin films with an optimal growth window in a range 25–160 °C, so effectively lowering the growth temperature by about 120 °C relative to the conventional method involving a continuous-flow. We characterized the microstructure of these films with X-ray reflectivity and high-resolution X-ray diffraction (XRD) measurements. The XRD results indicate that the stock time might extend the reaction of DEZn and water through an increased duration. This low temperature for growth results in increased crystalline quality and reduced the non-radiative recombination process to enhance the optical properties of ZnO films.