Electrical and dielectric behavior of fluorite-like Sr0.8Bi2.6Ta2O9 thin films pyrolyzed and thermally annealed at 450 °C

In this paper, we present the results of the fabrication and characterization of fluorite-like Sr0.8Bi2.6Ta2O9 (SBT) thin films spin-coated on Ir (50 nm)/SiO2 (100 nm)/p-type (1 0 0)Si substrates using the metal–organic decomposition (MOD) technique. The SBT films prepared at 450 °C under various annealing times were characterized by X-ray diffraction (XRD) as fluorite phase. The polarization versus electric field (P–E) behavior of SBT thin films pyrolyzed and annealed at 450 °C for 60 min was linear with dielectric constant of 100. The 450 °C annealed films have the leakage current density of about 4×10−8 A/cm2 at 200 kV/cm. The dependence of cumulative failure on dielectric breakdown field and time-dependent dielectric breakdown studies for these paraelectric SBT films indicated that the longer the annealing time, the better the breakdown field, whereas the film with no annealing treatment had a lifetime of over 10 years on operation at the electric field of 0.8 MV/cm.