• Title of article

    Behaviour of plasma hydrogenated n-type silicon in aqueous fluoride media: comparison with non-hydrogenated silicon

  • Author/Authors

    B. Benhaoua، نويسنده , , T. Kerbache، نويسنده , , A. Chari، نويسنده , , O. Gorochov، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2004
  • Pages
    8
  • From page
    315
  • To page
    322
  • Abstract
    We investigate the electrochemical behaviour, in the dark, of hydrogenated n-type silicon (n-Si (H)) as function of the plasma hydrogenation duration. We also study the pore size microstructures and the flat band potential (Vfb). The results are compared with non-hydrogenated n-Si. An electrochemical reactionary mechanism is proposed and model is developed to explain these results.
  • Keywords
    Capacitance–voltage , Dark current , Porous silicon , Plasma hydrogenation , Electrochemistry , Surface morphology
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2004
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1062299

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1062299