Title of article
Reverse-loop impedance profile in Bi2S3 quantum dots
Author/Authors
K.A.Z. Syed Abuthahir، نويسنده , , R. Jagannathan، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2010
Pages
9
From page
184
To page
192
Abstract
Bismuth sulfide quantum dots (ϕ ∼ 12 nm) with two-dimensional platelet morphology synthesized using a simple aqueous colloidal method exhibit directional growth along 〈2 1 1〉 direction. Impedance characteristics of this two-dimensional quantum structure yields a characteristic semi-circular profile due to a classical Voigt element in addition to a semi-circle like loop in the negative imaginary part of the impedance Nyquist plot. The apparent inductive reverse-loop impedance profile observed, a distinguishing feature of this study can be explained on the basis of an unusual negative resistor–capacitor combination, realized due to relaxation of surface states in this technologically important semiconductor–quantum structure.
Keywords
Optical properties , Nano-structures , Chalcogenides , Semiconductors , Electrochemical properties
Journal title
Materials Chemistry and Physics
Serial Year
2010
Journal title
Materials Chemistry and Physics
Record number
1062364
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