Title of article
Temperature dependence of In1−xGaxSb reflectivity in the far infrared
Author/Authors
P.M. Nikolic، نويسنده , , K.M. Paraskevopoulos، نويسنده , , E. Pavlidou، نويسنده , , T.T. Zorba، نويسنده , , T. Ivetic، نويسنده , , S.S. Vujatovic، نويسنده , , O.S. Aleksi?، نويسنده , , N. Nikolic، نويسنده , , O. Cvetkovi?، نويسنده , , V. Blagojevic، نويسنده , , M.V. Nikolic، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2011
Pages
5
From page
72
To page
76
Abstract
Far infrared reflectivity spectra of polycrystalline In1−xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures.
Keywords
Semiconductors , Optical properties , Phonons , Fourier transform infrared spectroscopy (FTIR)
Journal title
Materials Chemistry and Physics
Serial Year
2011
Journal title
Materials Chemistry and Physics
Record number
1062810
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