Title of article
MOVPE growth of ZnSe films on ZnO/Si templates
Author/Authors
X.H. Wang، نويسنده , , X.W. Fan، نويسنده , , C.X. Shan، نويسنده , , Z.Z. Zhang، نويسنده , , J.Y. Zhang، نويسنده , , Y.M. Lu، نويسنده , , Amy Y.C. Liu، نويسنده , , D.Z. Shen، نويسنده , , Y.K. Su، نويسنده , , S.J. Chang a، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
102
To page
105
Abstract
We report the growth and characterization of ZnSe films prepared on ZnO/Si(1 1 1) templates. It was found that the as-deposited ZnSe films are highly oriented with zinc blende structure, and the preferred crystal orientation is (1 1 1). The small X-ray diffraction (XRD) full-wide-half-maximum (FWHM) also suggests that the crystal quality of the deposited ZnSe films is reasonably good. From temperature dependent photoluminescence (PL) measurements, it was found that exciton binding energy, EB, equals 25.6 meV for the as-prepared ZnSe/ZnO/Si(1 1 1) samples.
Keywords
MOVPE , Si substrate , ZnSe , PL
Journal title
Materials Chemistry and Physics
Serial Year
2004
Journal title
Materials Chemistry and Physics
Record number
1062834
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