Author/Authors :
X.H. Wang، نويسنده , , X.W. Fan، نويسنده , , C.X. Shan، نويسنده , , Z.Z. Zhang، نويسنده , , J.Y. Zhang، نويسنده , , Y.M. Lu، نويسنده , , Amy Y.C. Liu، نويسنده , , D.Z. Shen، نويسنده , , Y.K. Su، نويسنده , , S.J. Chang a، نويسنده ,
Abstract :
We report the growth and characterization of ZnSe films prepared on ZnO/Si(1 1 1) templates. It was found that the as-deposited ZnSe films are highly oriented with zinc blende structure, and the preferred crystal orientation is (1 1 1). The small X-ray diffraction (XRD) full-wide-half-maximum (FWHM) also suggests that the crystal quality of the deposited ZnSe films is reasonably good. From temperature dependent photoluminescence (PL) measurements, it was found that exciton binding energy, EB, equals 25.6 meV for the as-prepared ZnSe/ZnO/Si(1 1 1) samples.
Keywords :
MOVPE , Si substrate , ZnSe , PL
