Title of article :
Empirical pseudopotential study of electronic, positron, and structural properties of Ga1−xAlxN
Author/Authors :
Y. Al-Douri، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
9
From page :
339
To page :
347
Abstract :
Electronic and positron band structures and charge densities of Ga0.5Al0.5N using the empirical pseudopotential method (EPM) are investigated. For the ternary alloy Ga1−xAlxN, the virtual crystal approximation (VCA) is coupled with the pseudopotential method. The energies along Γ, X and L of Ga1−xAlxN alloy as a function of the mole fraction are calculated. Angular correlation of positron annihilation radiation (ACPAR) along different crystallographic directions in Ga0.5Al0.5N is calculated. Other quantities such as ionicity character and bulk modulus by means of recent models with respect to the mole fraction are discussed.
Keywords :
GaAlN , Positron , EPM
Journal title :
Materials Chemistry and Physics
Serial Year :
2004
Journal title :
Materials Chemistry and Physics
Record number :
1062900
Link To Document :
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