Influence of spacer layer on InP/InGaAs δ-doped heterojunction bipolar transistors

In this paper, the influence of spacer layers on DC performance of InP/InGaAs δ-doped heterojunction bipolar transistors (HBTʹs) is investigated by theoretical analysis and experimental results. As compared to previous δ-doped HBTʹs, the studied device has another left-side InGaAs spacer added between δ-doped sheet and InP emitter layers at base–emitter (B–E) junction. The left-side spacer more effectively helps to maintain the integrity of uniform-doped InP emitter and the quality of interface; reduce the emitter barrier for electrons, decrease the collector–emitter offset voltage, and increases the confinement effect for holes. An analytical model related to the potential spike at B–E junction and base recombination current is developed to demonstrate the transistor performances. Experimentally, transistor performances with a maximum current gain of 455 and a low offset voltage of 55 mV are achieved.