Title of article
Ferroelectric behavior of titanium oxygen octahedral amorphous CaCu3Ti4O12 thin film
Author/Authors
Wilson W.L. Li، نويسنده , , W.T. Song، نويسنده , , Y. Zhao، نويسنده , , Q.G. Chi، نويسنده , , N. Li، نويسنده , , W.D Fei، نويسنده , , Z.G. Zhang، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2011
Pages
4
From page
394
To page
397
Abstract
CaCu3Ti4O12 thin films were prepared on Pt/Ti/SiO2/Si substrate by a sol–gel method. A ferroelectric hysteresis loop was obtained at room temperature for amorphous CaCu3Ti4O12 thin film. The ferroelectric characteristic of amorphous CaCu3Ti4O12 thin film was corroborated by the observation of piezoresponse force microscopy. The result indicates that there exists correlated intrinsic electric dipole moment in amorphous CaCu3Ti4O12 thin film, and the origin of ferroelectricity in amorphous CaCu3Ti4O12 thin film is also discussed.
Keywords
A. Electronic materials , C. Electronic characterisation , C. Grazing incidence X-ray diffraction , B. Sol–gel growth
Journal title
Materials Chemistry and Physics
Serial Year
2011
Journal title
Materials Chemistry and Physics
Record number
1063397
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