Title of article
Effect of sulfurization temperature on the surface roughening, electrical and optical properties of FeS2 films deposited by sol–gel method
Author/Authors
Feng Wang، نويسنده , , Liuyi Huang، نويسنده , , Zhaoju Luan، نويسنده , , Jisheng Huang، نويسنده , , Liang Meng، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2012
Pages
4
From page
505
To page
508
Abstract
FeS2 films were prepared by sulfurizing precursive Fe2O3 films at different temperatures. The structural and photoelectrical characters were determined. According to these results, precursive Fe2O3 sulfurized at temperatures 400–600 °C could transform into FeS2 films. The RMS roughness decreases in the low temperature period from 300 to 400 °C and then increases by further increasing the temperature. The changes of surface roughness can be attributed to the different interactions of surface energy and interface energy at different sulfurization temperatures. The optical and electrical properties of the films depend mainly on the changes of the density of crystal defects and the microstructure. With the sulfurization temperature increasing, the optical absorption coefficient and band gap decrease while the electrical resistivity increases.
Keywords
Thin films , Atomic force microscopy (AFM) , Electrical properties , Optical properties
Journal title
Materials Chemistry and Physics
Serial Year
2012
Journal title
Materials Chemistry and Physics
Record number
1063986
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