Enhanced performance and reliability of NILC-TFTs using FSG buffer layer

A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILC-TFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs.