Author/Authors :
Maria R. Catalano، نويسنده , , Graziella Malandrino، نويسنده , , Corrado Bongiorno ، نويسنده , , Roberta G. Toro، نويسنده , , Patrick Fiorenza، نويسنده , , Romain Bodeux، نويسنده , , Jerome Wolfman، نويسنده , , Monique Gervais، نويسنده , , Cécile Autret Lambert، نويسنده , , François Gervais، نويسنده , , Raffaella Lo Nigro، نويسنده ,
Abstract :
Metal Organic Chemical Vapor Deposition (MOCVD) and Pulsed Laser Deposition (PLD) techniques have been used for the growth of CaCu3Ti4O12 (CCTO) thin films on La0.9Sr1.1NiO4/LaAlO3 (LSNO/LAO) stack. (1 0 0) oriented CCTO films have been formed through both deposition routes and film complete structural and morphological characterizations have been carried out using several techniques (X-ray diffraction, scanning electron microscopy, energy-filtered transmission electron microscopy). The comparative study demonstrated some differences at the CCTO/LSNO interfaces depending on the adopted deposition technique. Chemical/structural modification of the LSNO electrode probably occurred as a function of the different oxygen partial pressure used in the PLD and MOCVD processes.
Keywords :
Insulators , Physical vapor deposition , Dielectric properties , Chemical vapor deposition