• Title of article

    In situ synthesis of Si3N4 from Na2SiF6 as a silicon solid precursor

  • Author/Authors

    A.L. Leal-Cruz، نويسنده , , M.I. Pech-Canul، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2006
  • Pages
    7
  • From page
    27
  • To page
    33
  • Abstract
    The aim of this investigation was to synthesize Si3N4 through the reaction of nitrogen with SiF4(g) produced during the thermal decomposition of sodium hexafluorosilicate (Na2SiF6) and based on an experiment design, optimize the processing conditions. The quantitative effect and the contribution of the processing parameters on the amount of Si3N4 formed was determined using analysis of variance (ANOVA). Results show that particles, whiskers/fibers and coatings of α and β-Si3N4 can be produced in the same reaction chamber where the silicon precursor (SiF4) is generated. The optimum conditions for maximum amount of Si3N4 formed are: 60 min, 1300 °C, N2–NH3, 17 mbar, a preform of 85 SiC:15 Si (wt.%) with 50% porosity, and a compact of Na2SiF6 of 25 g. The versatility for synthesizing Si3N4 with a variety of morphologies through an in situ process suggests the potential of the proposed route for the economic production of Si3N4.
  • Keywords
    Nitrides , Chemical vapor deposition (CVD) , Coatings
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2006
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1064414