Microwave dielectric properties of BiNb1−xMoxO4 ceramics

The sintering behavior, microstructure and microwave dielectric properties of BiNb1−xMoxO4 (x = 0.005, 0.01, 0.03 and 0.05) ceramics have been investigated. The phase-forming temperature (from orthorhombic to triclinic phase) of BiNb1−xMoxO4 ceramics during sintering is lower than that (1024 °C) of BiNbO4 ceramics. The variations of dielectric constant, Q value and temperature coefficient of resonant frequency are also investigated. A defect dipole model is proposed for the explanation of dielectric behavior of MoO3-doped BiNbO4 ceramics.