Title of article
Improved diffusion barrier performance of Ru/TaN bilayer by N effusion in TaN underlayer
Author/Authors
L. Wang، نويسنده , , Z.H. Cao، نويسنده , , K. Hu، نويسنده , , Q.W. She، نويسنده , , X.K. Meng، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2012
Pages
4
From page
806
To page
809
Abstract
Two bilayers of Ru/TaN with low N concentration and high N concentration (TaNL and TaNH) were used to determine the effect of N effusion on the barrier property. The results show that Ru/TaNH bilayer exhibits a better barrier property, in which RuN existed even after annealing at 650 °C. The improved barrier property is attributed to the formation of RuN and N atoms stuffing in grain boundaries of Ru layer by sufficient effusion N atoms from TaNH during annealing.
Keywords
RuN , Microstucture , Interface diffusion , Diffusion barrier
Journal title
Materials Chemistry and Physics
Serial Year
2012
Journal title
Materials Chemistry and Physics
Record number
1064676
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