Title of article
Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures
Author/Authors
G. Pineda-Hern?ndez، نويسنده , , A. Escobedo-Morales، نويسنده , , U. Pal، نويسنده , , E. Chigo Anota، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2012
Pages
8
From page
810
To page
817
Abstract
In the present article, the effect of gallium doping on the morphology, structural, and vibrational properties of hydrothermally grown ZnO nanostructures has been studied. It has been observed that incorporated gallium plays an important role on the growth kinetics and hence on the morphology evolution of the ZnO crystals. Ga doping in high concentration results in the contraction of ZnO unit cell, mainly along c-axis. Although Ga has high solubility in ZnO, heavy doping promotes the segregation of Ga atoms as a secondary phase. Incorporated Ga atoms strongly affect the vibrational characteristics of ZnO lattice and induce anomalous Raman modes. Possible mechanisms of morphology evolution and origin of anomalous Raman modes in Ga doped ZnO nanostructures are discussed.
Keywords
Semiconductors , Crystal growth , Defects , Phonons
Journal title
Materials Chemistry and Physics
Serial Year
2012
Journal title
Materials Chemistry and Physics
Record number
1064679
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