• Title of article

    Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

  • Author/Authors

    G. Pineda-Hern?ndez، نويسنده , , A. Escobedo-Morales، نويسنده , , U. Pal، نويسنده , , E. Chigo Anota، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2012
  • Pages
    8
  • From page
    810
  • To page
    817
  • Abstract
    In the present article, the effect of gallium doping on the morphology, structural, and vibrational properties of hydrothermally grown ZnO nanostructures has been studied. It has been observed that incorporated gallium plays an important role on the growth kinetics and hence on the morphology evolution of the ZnO crystals. Ga doping in high concentration results in the contraction of ZnO unit cell, mainly along c-axis. Although Ga has high solubility in ZnO, heavy doping promotes the segregation of Ga atoms as a secondary phase. Incorporated Ga atoms strongly affect the vibrational characteristics of ZnO lattice and induce anomalous Raman modes. Possible mechanisms of morphology evolution and origin of anomalous Raman modes in Ga doped ZnO nanostructures are discussed.
  • Keywords
    Semiconductors , Crystal growth , Defects , Phonons
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2012
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1064679