Title of article
High quality antireflective ZnS thin films prepared by chemical bath deposition
Author/Authors
S. Tec-Yam، نويسنده , , J. Rojas، نويسنده , , V. Rejon and R. Castro-Rodriguez، نويسنده , , A.I. Oliva، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2012
Pages
8
From page
386
To page
393
Abstract
Zinc sulfide (ZnS) thin films for antireflective applications were deposited on glass substrates by chemical bath deposition (CBD). Chemical analysis of the soluble species permits to predict the optimal pH conditions to obtain high quality ZnS films. For the CBD, the ZnCl2, NH4NO3, and CS(NH2)2 were fixed components, whereas the KOH concentration was varied from 0.8 to 1.4 M. Groups of samples with deposition times from 60 to 120 min were prepared in a bath with magnetic agitation and heated at 90 °C. ZnS films obtained from optimal KOH concentrations of 0.9 M and 1.0 M exhibited high transparency, homogeneity, adherence, and crystalline. The ZnS films presented a band gap energy of 3.84 eV, an atomic Zn:S stoichiometry ratio of 49:51, a transmittance above 85% in the 300–800 nm wavelength range, and a reflectance below 25% in the UV–Vis range. X-ray diffraction analysis revealed a cubic structure in the (111) orientation for the films. The thickness of the films was tuned between 60 nm and 135 nm by controlling the deposition time and KOH concentration. The incorporation of the CBD-ZnS films into ITO/ZnS/CdS/CdTe and glass/Mo/ZnS heterostructures as antireflective layer confirms their high optical quality.
Keywords
Semiconductors , Thin films , Chemical synthesis , Nanostructures
Journal title
Materials Chemistry and Physics
Serial Year
2012
Journal title
Materials Chemistry and Physics
Record number
1064816
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