Title of article :
γ-MnS thin films prepared by chemical bath deposition: Effect of bath temperature on their physical properties
Author/Authors :
C. Ulutas، نويسنده , , E. Guneri، نويسنده , , F. Kirmizigul، نويسنده , , G. Altindemir، نويسنده , , F. Gode، نويسنده , , C. Gumus، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2013
Pages :
6
From page :
817
To page :
822
Abstract :
γ-MnS thin films were deposited on glass substrates by chemical bath deposition at different temperatures (27 °C, 40 °C and 70 °C). These films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDX) and optical absorption spectra. The obtained films exhibit hexagonal structures through the (002) plane with a varied grain size of between 241 Å and 318 Å. The band gap energy is found to be in the range of 3.40–3.80 eV. Moreover, electrical conductivity and mobility of the films were determined from the room temperature Hall measurements, which show that the obtained films have n-type conductivity and electrical conductivity, and mobility values change in the range (4.3–9.9) × 10−6 (Ω cm)−1 and 80–350 cm2 V−1 s−1, respectively. The influence of the bath temperature on the structural, optical and electrical properties of γ-MnS films was investigated and it was concluded that a growth temperature of 70 °C is suitable for producing γ-MnS films by chemical bath deposition technique, and the properties found in these films show their feasibility for technological purposes, especially for solar cells.
Keywords :
Chalcogenides , Electrical properties , Thin films , Energy dispersive analysis of X-rays (EDS or EDAX) , Optical properties
Journal title :
Materials Chemistry and Physics
Serial Year :
2013
Journal title :
Materials Chemistry and Physics
Record number :
1065129
Link To Document :
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