Title of article :
Microstructure related transport phenomena in chemically deposited PbSe films
Author/Authors :
M. Shandalov، نويسنده , , Z. Dashevsky، نويسنده , , Y. Golan، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2008
Abstract :
We report on the electrical properties of chemically deposited PbSe films with controlled microstructure ranging from nanocrystalline to single crystal films. Control over the deposition mechanism consequently allowed control over the physical properties of the obtained films. The electrical conductivity, carrier concentration, drift mobility and carrier scattering mechanism were correlated with the film morphology. In polycrystalline PbSe films, the activation energy of the electrical conductivity is governed by the nature of the grain boundaries. In monocrystalline PbSe films, conductivity vs. temperature depends on carrier scattering from lattice vibrations.
Keywords :
Semiconductors , Chemical deposition , Electrical properties , Lead selenide , Electrical characterization
Journal title :
Materials Chemistry and Physics
Journal title :
Materials Chemistry and Physics