Effect of oxygen and yttrium doping on the electrical resistivity and hardness of titanium metal obtained by electron beam melting

Commercially pure titanium sputtering target scraps of purity 4N5 (99.995 at.%) were melted into circular solid ingots using electron beam melting (EBM). Variation of electrical resistivity and Vickers hardness were studied in oxygen and yttrium doped titanium buttons ranged from 500 to 7900 ppm and 0.556 to 3.226 wt.%, respectively. X-ray diffraction patterns conformed to the hcp structure in all the oxygen and yttrium doped titanium samples. Increase in O content (500–7900 ppm) in Ti has increased the electrical resistivity, where as increase in Y (0.556–3.226%) content in Ti has decreased it. The electrical resistivity and Vickers hardness with the variation of oxygen or yttrium doping content in the titanium were found to have a similar trend.