Ultra low-dielectric-constant methylated mesoporous silica films with high hydrophobicity and stability

Vapor phase treatment with tetraethyl orthosilicate (TEOS) is used to improve the performance of methylated mesoporous silica films spin-coated on silicon wafers. Subsequent calcination leads to formation of ultra low dielectric-constant (k) films with high hydrophobicity and structural stability. The k value of the films is about 1.75, and remains as low as 1.82 in an 80%-relative-humidity environment over seven days. Mechanical strength (elastic modulus and hardness) is high enough to withstand the stresses that occur during the chemical mechanical polishing and wire bonding process (E = 10.9 GPa). Effects of the methyl group and TEOS vapor treatment on the structural stability and hydrophobicity are systematically studied.