N/sub 2/-incorporation-induced blue shift in InGaAsN/GaAs quantum well during annealing

Three different kinds of quantum wells (QWs) were grown at the same growth temperature by molecular beam epitaxy (MBE): InGaAs/GaAs QW without any N/sub 2/ background; InGaAs(N/sub 2/)/GaAs double QWs with N/sub 2/ flow to the sample but without plasma; and InGaAsN/GaAs QW with N-plasma. The latter two types of QW were grown on one sample. Post-growth rapid thermal annealing (RTA) was applied to them at 700(degree)C. After 31.5 min of RTA, it was observed that the photoluminescence blue shift of the InGaAs(N/sub 2/) QW was 40 meV, which was 9 meV more than that for the InGaAsN QW, and the InGaAs QW had only about 13 meV blue shift. However, for the as-grown case, the PL peak position of the InGaAs QW and InGaAs(N/sub 2/) QWs were the same (1148 nm), and for the InGaAsN QW it was 220 nm longer. This indicates that there is N/sub 2/ incorporation during InGaAsN growth, the N/sub 2/ incorporation does not affect the band structure and the N/sub 2/ incorporation dominates the blue shift during RTA.