Optimisation of GaAs-based (GaIn)(NAs)//GaAs vertical-cavity surface-emitting diode lasers for high-temperature operation in 1.3-(mu)m optical-fibre communication systems

Performance of GaAs-based (GaIn)(NAs)/GaAs vertical-cavity surface-emitting diode lasers (VCSELs) at higher temperatures for second-generation optical-fibre communication systems is examined with the aid of the comprehensive threshold fully self-consistent optical-electrical-thermal-gain model. As expected, in standard double-oxide-confined VCSELs, an increase in the active-region diameter is followed by an increase in the lowest-threshold transverse mode order, especially at higher temperatures. It has been found that reduction of a diameter of the bottom aperture may ensure fundamental LP/sub 01/ mode operation even at higher temperatures.