Author/Authors :
C.، Fontaine نويسنده , , H.، Carrere, نويسنده , , Arnoult، A نويسنده , , X.، Marie, نويسنده , , J.، Barrau, نويسنده , , T.، Amand, نويسنده , , E.، Bedel-Pereira, نويسنده ,
Abstract :
The band structure of InGaAsN/GaAs and InGaAsN/GaAsN strained quantum wells has been calculated using the band anticrossing model and an eight-band k.p Hamiltonian. The calculated interband optical transition energies have been compared to the experimental ones deduced from photocurrent spectroscopy experiments. Optical dipole moments for the interband optical transitions and the dependence of the optical gain spectra on injected carrier density have been computed.
