Author/Authors :
N.، Balkan, نويسنده , , S.، Mazzucato, نويسنده , , R.J.، Potter, نويسنده , , H.، Carrere, نويسنده , , E.، Bedel, نويسنده , , Arnoult، A نويسنده , , X.، Marie, نويسنده , , J.Y.، Wah, نويسنده , , N.، Loubet, نويسنده ,
Abstract :
The basic operation of a novel GaInNAs/GaAs based light emitting/absorbing device operating at 1250 nm is described. The device is a bi-directional field effect light emitting and absorbing heterojunction (BiFEEAH), which can simultaneously emit and detect light. This feature makes it possible to construct a wavelength converter, where one end of the device absorbs incoming light and the other end emits light at a different wavelength. The current device consists of a simple GaAs p-i-n structure, containing a single 90 A GaInNAs quantum well in its intrinsic region. This is fabricated into a four contact device with separate n and p conducting channels.
