Author/Authors :
I.، Vurgaftman, نويسنده , , J.R.، Meyer, نويسنده , , G.، Borghs, نويسنده , , W.W.، Bewley, نويسنده , , L.، Song, نويسنده , , S.، Degroote, نويسنده , , C.-S.، Kim, نويسنده , , P.، Heremans, نويسنده ,
Abstract :
The authors report the design, MBE growth, processing and characterisation of mid-infrared type-II W lasers grown on InAs. Optical pumping by a 980 nm laser diode produced CW lasing to 78 K, where the emission wavelength was 3.52 (mu)m. Pulsed operation was observed to 265 K with pumping by a Q-switched 2.1 (mu)m Ho:YAG laser. The differential power conversion efficiency per facet for the 40-period structure was as high as 4.6% at T = 30 K in the CW mode. The threshold at low temperatures was extremely low, e.g. 20 W/cm/sup 2/ at T = 20 K. The characteristic temperature for CW lasing at 10 K < T < 78 K was 26 K, while for pulsed operation in the range T = 78 - 200 K it was 36 K.
