Author/Authors :
B.A.، Matveev, نويسنده , , M.، Aydaraliev, نويسنده , , N.V.، Zotova, نويسنده , , S.A.، Karandashov, نويسنده , , N.D.، Ilinskaya, نويسنده , , M.A.، Remennyi, نويسنده , , N.M.، Stus, نويسنده , , G.N.، Talalakin, نويسنده ,
Abstract :
Light-emitting diodes operating in the 2.8-2.9 (mu)m spectral region have been fabricated from InGaAs and InAsSbP p-n structures grown onto n- and heavily doped n/sup +/-InAs substrates. Owing to the high transparency of the n/sup +/-InAs and nInGaAs buffer, the episide-down construction was successfully implemented for LEDs and photodiodes, and room temperature operation with output power and detectivity as high as 400 (mu)W (I = 1A) and 1.5 * 10/sup 10/cm Hz/sup 1/2//W was correspondingly achieved. Operation of the LEDs and optically coupled LED-photodiode pairs was demonstrated in the 15-190(degree)C temperature range.
