Title of article
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate
Author/Authors
R.، Coffie, نويسنده , , S.، Keller, نويسنده , , S.، Heikman, نويسنده , , A.، Chini, نويسنده , , U.K.، Mishra, نويسنده , , D.، Buttari, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-72
From page
73
To page
0
Abstract
Record power performance at 4 GHz has been obtained using field-plated AlGaN/GaN HEMTs on sapphire substrate. High power density (12 W/mm) as well as high efficiency (58%) have been measured. A comparison between devices with and without field plate on the same sample showed a significant reduction in knee-voltage walk-out for the field-plated device, thus enabling high power and efficiency operation.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
106997
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