Author/Authors :
J.، Zhang, نويسنده , , A.، Seabaugh, نويسنده , , T.، Kosel, نويسنده , , L.-E.، Wernersson, نويسنده , , S.، Kabeer, نويسنده , , V.، Zela, نويسنده , , E.، Lind, نويسنده , , W.، Seifert, نويسنده ,
Abstract :
A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly borondoped p/sup +/-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n/sup +/-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si/sub 0.74/Ge/sub 0.26/, showing a peak current density of 0.18 kA/cm/sup 2/ and a current peak-to-valley ratio of 2.6 at room temperature.
