Title of article
Device characteristics of Si PMOSFETs with decaborane (B/sub 10/H/sub 14/) or elemental B extension implants
Author/Authors
Agarwal، A نويسنده , , H.-J.L.، Gossmann, نويسنده , , A.S.، Perel, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-146
From page
147
To page
0
Abstract
PMOS transistors with coded gate-lengths down to 100 nm have been fabricated using either 5.6 keV 2*10/sup 13/ cm/sup -2/ decaborane (B/sub 10/H/sub 14/) or 0.5 keV 2*10/sup 14/ cm/sup -2/ elemental B for the extension implant. DC device characteristics are essentially identical between the two implant processes, indicating that decaborane is a viable alternative to elemental B in this area.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107045
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