Method for determination of carrier capture cross-sections at Si/SiO/sub 2/ interface

A simple DC method for measurement of the capture cross-sections at the Si/SiO/sub 2/ interface is presented. The method combines the measurement of the interface recombination current under the gate of the MOS transistor with the measurement of the subthreshold slope. The results are in good agreement with previous results obtained by AC small-signal and transient methods.