Title of article
Method for determination of carrier capture cross-sections at Si/SiO/sub 2/ interface
Author/Authors
L.، Wang, نويسنده , , A.، Neugroschel, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-147
From page
148
To page
0
Abstract
A simple DC method for measurement of the capture cross-sections at the Si/SiO/sub 2/ interface is presented. The method combines the measurement of the interface recombination current under the gate of the MOS transistor with the measurement of the subthreshold slope. The results are in good agreement with previous results obtained by AC small-signal and transient methods.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107046
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