Low threshold current density 1.3 (mu)m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy

InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy (MBE) are reported. The laser emits 1.296 (mu)m light output and demonstrates a very low threshold current density of 111 A/cm/sup 2/. This is the lowest reported value of GaAs-based 1.3 (mu)m quantum dot lasers with InGaP cladding layers.