Title of article
Multilevel memory using single-electron turnstile
Author/Authors
Y.، Takahashi, نويسنده , , Y.، Ono, نويسنده , , H.، Inokawa, نويسنده , , A.، Fujiwara, نويسنده , , K.، Nishiguchi, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-228
From page
229
To page
0
Abstract
A multilevel single-electron memory has been successfully demonstrated. Two fine gates with phase-shifted pulse voltages modulate potential barriers in a one-dimensional Si channel to transfer electrons one by one into a memory node, and the number of electrons in the node is sensed by a single-electron transistor.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107099
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