Author/Authors :
Y.، Arayashiki, نويسنده , , Y.، Ohkubo, نويسنده , , Y.، Amano, نويسنده , , A.، Takagi, نويسنده , , M.، Ejima, نويسنده , , Y.، Matsuoka, نويسنده ,
Abstract :
A high-gain and broadband distributed amplifier using high-performance high-reliability InGaP/GaAs HBTs is reported. A novel two-block configuration is used in gain cells in this distributed amplifier, which achieves a bandwidth of 80 GHz with a gain of 16 dB, resulting in a gain-bandwidth product of 504 GHz.
