Title of article
Analytical cascode model of buried-gate SiC MESFETs
Author/Authors
L.F.، Eastman, نويسنده , , M.G.، Spencer, نويسنده , , H.-Y.، Cha, نويسنده , , Y.C.، Choi, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-270
From page
271
To page
0
Abstract
A cascode model is proposed to analyse current-voltage and cutoff frequency characteristics of the buried-gate device. A high saturation current of the buried-gate device is associated with the short channel FET representing the buried region. Two unsaturated side FETs result in a relatively lower cutoff frequency of the buried-gate device compared to the gate-recessed one.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107127
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