Improved extraction method for effective channel length of deep-submicrometre MOSFETs

An improved method for extracting the effective channel length in deep-submicrometre MOSFETs using S-parameter sets of real devices with different mask gate length is developed to overcome the drawbacks of a conventional low-frequency C-V method. This improved method is based on the accurate determination of the inversion channel capacitance using a new technique to remove parasitic overlap and fringe capacitances.