Author/Authors :
A.A.، Rezazadeh, نويسنده , , V.T.، Vo, نويسنده , , Z.R.، Hu, نويسنده , , K.L.، Koon, نويسنده , , C.N.، Dharmasiri, نويسنده , , S.C.، Subramaniam, نويسنده ,
Abstract :
GaAs planar doped barrier zero-bias detector diodes with voltage sensitivities of as high as 17 mV/(mu)W at 10 GHz and 29 mV/(mu)W at 35 GHz have been successfully designed, fabricated and tested. In comparison with existing devices, these sensitivities are 3-10 times higher, implying that the diodes can detect much lower RF power.
