Title of article
High voltage sensitivity GaAs planar doped barrier diodes for microwave/millimetre-wave zero-bias power detector applications
Author/Authors
A.A.، Rezazadeh, نويسنده , , V.T.، Vo, نويسنده , , Z.R.، Hu, نويسنده , , K.L.، Koon, نويسنده , , C.N.، Dharmasiri, نويسنده , , S.C.، Subramaniam, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-342
From page
343
To page
0
Abstract
GaAs planar doped barrier zero-bias detector diodes with voltage sensitivities of as high as 17 mV/(mu)W at 10 GHz and 29 mV/(mu)W at 35 GHz have been successfully designed, fabricated and tested. In comparison with existing devices, these sensitivities are 3-10 times higher, implying that the diodes can detect much lower RF power.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107173
Link To Document