Author/Authors :
X.، Li, نويسنده , , J.H.، Feng Yan Zhao, نويسنده , , L.، Fursin, نويسنده , , L.، Jiao, نويسنده , , T.، Burke, نويسنده ,
Abstract :
The design, fabrication and characterisation of a high performance 4H-SiC diode of 1789 V-6.6 A with a low differential specific-on resistance (R/sub SP_ON/) of 6.68 m(Omega) . cm/sup 2/, based on a 10.3 (mu)m 4H-SiC blocking layer doped to 6.6*10/sup 15/ cm/sup -3/, is reported. The corresponding figure-of-merit of V/sub B//sup 2//R/sub SP_ON/ for this diode is 479 MW/cm/sup 2/, which substantially surpasses previous records for all other MPS diodes.
