Title of article
Nickel-silicidation process using hydrogen implantation
Author/Authors
C.-J.، Choi, نويسنده , , S.-A.، Song, نويسنده , , Y.-W.، Ok, نويسنده , , T.-Y.، Seong, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-390
From page
391
To page
0
Abstract
The effect of hydrogen implantation on a nickel silicide process has been investigated. X-ray photoemission spectroscopy results show that the hydrogen implantation is effective in suppressing the oxidation of NiSi. It is further shown that the junction leakage current of the implanted samples is about one order of magnitude lower than that of the unimplanted ones.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107204
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