Title of article
2.61 (mu)m GaInAsSb/AlGaAsSb type I quantum well laser diodes with low threshold
Author/Authors
A.، Vicet, نويسنده , , A.، Salhi, نويسنده , , Y.، Rouillard, نويسنده , , J.، Angellier, نويسنده , , P.، Grech, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-423
From page
424
To page
0
Abstract
Double quantum well laser diodes based on the GaInAsSb/AlGaAsSb system emitting at 2.61 (mu)m in continuous-wave regime have been fabricated. In the pulsed regime for a 100 (mu)m-wide 1600 (mu)m-long device a record threshold current density of 76 A/cm/sup 2/ per quantum well was obtained.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107226
Link To Document