Microstructure and property measurements on in situ TiB2/70Si–Al composite for electronic packaging applications

A novel reactive technique has been employed in fabrication of 2.0 wt.%TiB2/70Si–Al composite for electronic packaging applications. The microstructure and properties of composite were studied using scanning electron microscopy, energy dispersive X-ray spectrometer, coefficient of thermal expansion and thermal conductivity measurements, and 3-point bending tests. The results indicate that the in situ TiB2 particles can effectively refine the primary Si phase. The property measurements results indicate that the 2.0 wt.%TiB2/70Si–Al composite has advantageous physical and mechanical properties, including low density, low coefficient of thermal expansion, high thermal conductivity, high Flexural strength and Brinell hardness.