Author/Authors :
Martin، T. نويسنده , , Behtash، R. نويسنده , , Tobler، H. نويسنده , , Berlec، F.-J. نويسنده , , Ziegler، V. نويسنده , , Leier، H. نويسنده , , Balmer، R.S. نويسنده , , Neuburger، M. نويسنده , , Schumacher، H. نويسنده ,
Abstract :
A monolithic microwave integrated circuit power amplifier consistinig of one 8 * 100 (mu)m A1GaN/GaN transistor has been realised. At 10 GHz the coplanar amplifier delivers 35.7 dBm continuouswave (CW) output power corresponding to a power density of 4.6 W/mm with 26% maximum power added efficiency (PAE) at the bias point VDS=40 V. Reducing the bias to VDS=25 V results in 34.2 dBm maximum CW output power with 32% RAE at 10GHz.
