Author/Authors :
T.، Jouhti, نويسنده , , C.S.، Peng, نويسنده , , J.، Konttinen, نويسنده , , M.، Pessa, نويسنده , , S.، Karirinne, نويسنده , , N.، Laine, نويسنده ,
Abstract :
Performance characteristics of an InGaNAs/GaAs ridge-waveguide in-plane laser diode, which is grown by molecular beam epitaxy, are reported. The laser emits at a wavelength of 1.262 (mu)m in a single lateral mode, launching an output up to 240 mW at 20(degree)C and 20 mW at 120(degree)C. The threshold is 15 mA at 20(degree)C, corresponding to a threshold current density of 313 A/cm/sup 2/.
