Author/Authors :
T.، Inoue, نويسنده , , T.، Nakayama, نويسنده , , Y.، Ando, نويسنده , , M.، Kuzuhara, نويسنده , , M.، Senda, نويسنده , , K.، Hirata, نويسنده , , Y.، Okamoto, نويسنده , , H.، Miyamoto, نويسنده , , K.، Hataya, نويسنده , , M.، Kosaki, نويسنده , , N.، Shibata, نويسنده ,
Abstract :
Microwave high-power performance has been achieved using a recessed-gate AlGaN/GaN heterojunction FET with a fieldmodulating plate. Making use of recessed-gate structure, the device exhibited an improved transconductance of 200 mS/mm with a maximum drain current of 900 mA/mm and a gate-drain breakdown voltage of 200 V. A 48 mm wide single-chip FET exhibited 179 W (3.7 W/mm) output power, 64% power-added efficiency, and 9.3 dB linear gain at a drain bias of 46 V. The saturated output power of 179 W is believed to be the highest ever achieved for any single-chip FETs.
