Author/Authors :
G.، Rafael, نويسنده , , T.، Fernandez, نويسنده , , J.، Rodriguez-Tellez, نويسنده , , A.، Tazon, نويسنده , , A.، Mediavilla, نويسنده ,
Abstract :
A novel and more accurate approach to the measurement of mobility of GaAs HEMT devices is presented. The new approach employs high-order derivatives as a means of determining the parameters of the proposed new mobility equation. The results presented consider the behaviour of mobility in the linear and saturation bias regions.
