Author/Authors :
J.، Li, نويسنده , , O.V.، Sulima, نويسنده , , M.G.، Mauk, نويسنده , , J.A.، Cox, نويسنده , , T.F.، Refaat, نويسنده , , S.K.، Lohokare, نويسنده , , M.N.، Abedin, نويسنده , , U.N.، Singh, نويسنده , , J.A.، Rand, نويسنده ,
Abstract :
The first AlGaAsSb/InGaAsSb phototransistors sensitive in the 2.0-2.1 (mu)m spectral range are reported. These phototransistors exhibited both high gain and relatively low noise, and a record 2 (mu)m detectivity of 3.9 *10/sup 11/ cmHz/sup 1/2//W was obtained at -20(degree)C, which is equivalent to a noise-equivalent-power of 4.6*10/sup -14/ W/Hz/sup 1/2/.
