Title of article
InGaP/InGaAs PHEMT with high IP3 for low noise applications
Author/Authors
Y.C.، Lin, نويسنده , , E.Y.، Chang, نويسنده , , G.J.، Chen, نويسنده , , H.M.، Lee, نويسنده , , G.W.، Huang, نويسنده , , D.، Biswas, نويسنده , , C.-Y.، Chang, نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-776
From page
777
To page
0
Abstract
A low noise InGaP/InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) with high IP3 was developed. The device utilises InGaP as the Schottky layer to achieve a low noise figure and uses AlGaAs as the spacer to reform the electron mobility and contains dual delta doped layers to improve the device linearity.
Keywords
Hydrograph
Journal title
IEE Electronics Letters
Serial Year
2004
Journal title
IEE Electronics Letters
Record number
107458
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